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DATA SHEET
SILICON TRANSISTOR
2SC5181
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
* Low current consumption and high gain |S21e|2 = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz * Ultra Super Mini-Mold package
PACKAGE DIMENSIONS (Units: mm)
1.6 0.1 0.8 0.1 2 1.6 0.1 0.2 +0.1 -0 0.5 0.3 +0.1 -0 0.15 +0.1 -0.05
ORDERING INFORMATION
PART NUMBER 2SC5181 2SC5181-T1 QUANTITY 50 units/box 3 000 units/reel ARRANGEMENT Embossed tape, 8 mm wide, pin No. 3 (collector) facing the perforation 1.0
84
0.5
3
1
* Contact your NEC sales representatives to order samples for evaluation (available in batches of 50).
0.75 0.05
0.6
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 5 3 2 10 30 150 -65 to +150 V V V mA mW C C
PIN CONNECTIONS 1. Emitter 2. Base 3. Collector
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12105EJ2V0DS00 (2nd edition) (Previous No. TC-2478) Date Published November 1996 N Printed in Japan
0 to 0.1
(c)
1994
2SC5181
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PARAMETER Collector Cutoff Current Emitter Cutoff Current DC Current Gain Insertion Power Gain (1) Insertion Power Gain (2) Noise Figure (1) Noise Figure (2) Gain Bandwidth Product (1) Gain Bandwidth Product (2) Feedback Capacitance SYMBOL ICBO IEBO hFE |S21e|2 |S21e|2 NF NF fT fT Cre 10 8.5 70 8.0 7.0 10.5 9.0 1.5 1.5 13 12 0.4 0.6 2.0 2.0 MIN. TYP. MAX. 100 100 140 dB dB dB dB GHz GHz pF UNIT nA nA CONDITIONS VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 2 V, IC = 7 mA*1 VCE = 2 V, IC = 7 mA, f = 2 GHz VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 2 V, IC = 3 mA, f = 2 GHz VCE = 1 V, IC = 3 mA, f = 2 GHz VCE = 2 V, IC = 7 mA, f = 2 GHz VCE = 1 V, IC = 5 mA, f = 2 GHz VCB = 2 V, IE = 0 mA, f = 1 MHz*2
*1. *2.
Measured with pulses: Pulse width 350 s, duty cycle 2 %, pulsed Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal of the bridge.
hFE Class
Class Marking hFE FB 84 70 to 140
2
2SC5181
CHARACTERISTICS CURVES (TA = 25 C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 50 VCE = 2 V
PT - Total Power Dissipation - mW
200
Passive air cooling
IC - Collector Current - mA
40
30 20
100
10
30 mW 0 50 100 150
0
0.5 VBE - Base to Emitter Voltage - V DC CURRENT GAIN vs. COLLECTOR CURRENT
1.0
TA - Ambient Temperature - C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER 25 500
IC - Collector Current - mA
hFE - DC Current Gain
20 15 200 A 180 A 160 A 140 A 120 A 100 A 80 A 60 A 40 A IB = 20 A 1.0 2.0 3.0
200 VCE = 2 V 100 50 VCE = 1 V
10
5
20 10
0
1
2
5
10
20
50
100
VCE - Collector to Emitter Voltage - V GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
IC - Collector Current - mA INSERTION POWER GAIN vs. COLLECTOR CURRENT
fT - Gain Bandwidth Product - GHz
VCE = 2 V VCE = 1 V 10
|S21e|2 - Insertion Power Gain - dB
15
f = 2 GHz
f = 2 GHz 10
VCE = 2 V VCE = 1 V
5
5 1 2 3 5 7 10 20
0
1
2
3
5
7 10
20
IC - Collector Current - mA
IC - Collector Current - mA
3
2SC5181
NOISE FIGURE vs. COLLECTOR CURRENT 3 f = 2 GHz 0.8 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
Cre - Feedback Capacitance - pF
f = 1 MHz 0.6
NF - Noise Figure - dB
2
VCE = 1 V VCE = 2 V
0.4
0.2
1
1
2
3
5
7
10
20
0.0
2.0
4.0
6.0
8.0
10.0
IC - Collector Current - mA
VCB - Collector to Base Voltage - V
4
2SC5181
S-PARAMETERS
VCE = 1 V, IC = 1 mA, ZO = 50
FREQUENCY MHz 600.00 800.00 1000.00 1200.00 1400.00 1600.00 1800.00 2000.00 2200.00 MAG 0.892 0.795 0.704 0.653 0.598 0.524 0.464 0.415 0.355 S11 ANG -31.5 -40.9 -50.9 -60.1 -66.6 -73.7 -80.6 -88.8 -97.7 MAG 3.159 2.964 2.762 2.674 2.590 2.409 2.285 2.182 2.032 S21 ANG 142.3 130.8 119.7 110.1 103.0 94.9 87.2 81.7 74.6 MAG 0.113 0.152 0.180 0.204 0.228 0.253 0.265 0.270 0.278 S12 ANG 64.7 58.9 53.0 49.8 45.9 42.5 41.3 39.6 35.7 MAG 0.934 0.847 0.759 0.726 0.688 0.636 0.575 0.530 0.495 S22 ANG -25.9 -32.1 -39.9 -47.4 -53.1 -58.2 -64.2 -68.9 -74.6
VCE = 1 V, IC = 3 mA, ZO = 50
FREQUENCY MHz 600.00 800.00 1000.00 1200.00 1400.00 1600.00 1800.00 2000.00 2200.00 MAG 0.653 0.517 0.422 0.362 0.301 0.245 0.209 0.175 0.132 S11 ANG -48.4 -59.5 -68.5 -76.1 -81.4 -88.0 -92.7 -105.8 -121.6 MAG 6.121 5.199 4.502 4.084 3.661 3.279 3.024 2.796 2.535 S21 ANG 124.0 111.4 100.6 92.8 86.8 79.5 74.1 70.4 64.5 MAG 0.095 0.123 0.143 0.165 0.183 0.204 0.220 0.230 0.244 S12 ANG 59.6 55.7 53.0 53.5 51.6 50.1 49.7 50.0 46.8 MAG 0.754 0.629 0.533 0.493 0.448 0.411 0.369 0.334 0.311 S22 ANG -37.3 -43.1 -49.5 -54.2 -57.6 -61.1 -66.7 -69.5 -75.0
VCE = 1 V, IC = 3 mA, ZO = 50
FREQUENCY MHz 600.00 800.00 1000.00 1200.00 1400.00 1600.00 1800.00 2000.00 2200.00 MAG 0.514 0.389 0.307 0.253 0.202 0.157 0.130 0.108 0.077 S11 ANG -56.3 -66.9 -73.5 -79.7 -85.5 -91.8 -96.2 -116.1 -142.5 MAG 7.156 5.830 4.939 4.391 3.865 3.440 3.155 2.900 2.614 S21 ANG 115.3 103.5 93.6 86.9 81.4 74.7 70.1 67.0 61.5 MAG 0.082 0.109 0.131 0.151 0.175 0.196 0.213 0.227 0.241 S12 ANG 57.8 57.0 56.4 56.4 55.2 53.8 53.5 53.3 50.7 MAG 0.648 0.530 0.446 0.414 0.379 0.347 0.313 0.283 0.268 S22 ANG -40.3 -44.6 -48.9 -52.5 -55.2 -58.4 -63.6 -65.6 -71.7
VCE = 1 V, IC = 7 mA, ZO = 50
FREQUENCY MHz 600.00 800.00 1000.00 1200.00 1400.00 1600.00 1800.00 2000.00 2200.00 MAG 0.405 0.305 0.229 0.184 0.141 0.106 0.086 0.071 0.060 S11 ANG -61.9 -72.5 -78.2 -84.9 -91.4 -98.8 -104.3 -136.6 -174.6 MAG 7.590 6.043 5.059 4.454 3.886 3.455 3.162 2.898 2.606 S21 ANG 109.4 98.4 89.2 83.2 78.0 71.6 67.6 64.6 59.4 MAG 0.077 0.101 0.124 0.145 0.169 0.191 0.210 0.224 0.237 S12 ANG 59.1 59.0 57.9 59.2 57.6 56.2 55.3 55.9 52.7 MAG 0.570 0.469 0.399 0.374 0.347 0.322 0.290 0.264 0.249 S22 ANG -40.5 -43.6 -46.6 -49.4 -51.8 -54.5 -59.5 -61.4 -67.2
5
2SC5181
VCE = 1 V, IC = 10 mA, ZO = 50
FREQUENCY MHz 600.00 800.00 1000.00 1200.00 1400.00 1600.00 1800.00 2000.00 2200.00 MAG 0.324 0.232 0.167 0.128 0.094 0.067 0.055 0.068 0.083 S11 ANG -71.3 -82.5 -89.5 -98.6 -110.3 -127.3 -140.2 -176.6 153.2 MAG 7.550 5.924 4.927 4.307 3.740 3.326 3.041 2.781 2.498 S21 ANG 104.5 94.2 85.5 80.0 74.9 68.7 64.9 62.2 56.9 MAG 0.069 0.096 0.119 0.141 0.165 0.187 0.207 0.219 0.235 S12 ANG 62.8 61.0 59.7 61.4 60.6 58.2 57.6 57.4 54.8 MAG 0.526 0.434 0.375 0.355 0.335 0.314 0.283 0.262 0.247 S22 ANG -39.4 -40.5 -42.1 -44.8 -47.0 -49.2 -54.0 -56.1 -62.0
VCE = 2 V, IC = 1 mA, ZO = 50
FREQUENCY MHz 600.00 800.00 1000.00 1200.00 1400.00 1600.00 1800.00 2000.00 2200.00 MAG 0.901 0.811 0.719 0.671 0.621 0.549 0.488 0.438 0.380 S11 ANG -29.6 -38.5 -47.8 -56.7 -62.9 -69.2 -75.6 -83.6 -91.1 MAG 3.172 2.995 2.797 2.715 2.646 2.467 2.343 2.243 2.095 S21 ANG 143.7 132.6 121.7 112.2 105.3 97.5 89.8 84.3 77.3 MAG 0.106 0.143 0.172 0.196 0.220 0.240 0.255 0.261 0.268 S12 ANG 66.0 59.6 55.0 51.4 47.9 44.4 43.6 41.6 37.8 MAG 0.940 0.861 0.778 0.745 0.712 0.659 0.601 0.556 0.522 S22 ANG -24.4 -30.3 -37.6 -45.0 -50.5 -55.0 -60.8 -65.6 -70.9
VCE = 2 V, IC = 3 mA, ZO = 50
FREQUENCY MHz 600.00 800.00 1000.00 1200.00 1400.00 1600.00 1800.00 2000.00 2200.00 MAG 0.678 0.543 0.447 0.388 0.325 0.270 0.231 0.193 0.148 S11 ANG -44.9 -55.3 -63.1 -69.9 -74.0 -78.9 -82.5 -93.2 -103.1 MAG 6.256 5.350 4.650 4.225 3.809 3.408 3.144 2.918 2.647 S21 ANG 125.7 113.4 102.7 94.8 88.9 81.8 76.3 72.7 66.8 MAG 0.088 0.114 0.137 0.157 0.176 0.195 0.214 0.223 0.236 S12 ANG 60.5 56.1 54.8 54.2 53.1 51.3 51.5 51.1 48.8 MAG 0.778 0.656 0.563 0.519 0.481 0.441 0.397 0.363 0.343 S22 ANG -34.8 -40.4 -46.1 -50.7 -54.5 -57.3 -62.3 -65.0 -70.0
6
2SC5181
VCE = 2 V, IC = 5 mA, ZO = 50
FREQUENCY MHz 600.00 800.00 1000.00 1200.00 1400.00 1600.00 1800.00 2000.00 2200.00 MAG 0.539 0.415 0.332 0.280 0.228 0.183 0.157 0.123 0.084 S11 ANG -51.7 -61.1 -66.2 -71.9 -74.8 -78.2 -80.9 -95.6 -108.3 MAG 7.390 6.057 5.136 4.579 4.043 3.597 3.298 3.042 2.746 S21 ANG 117.1 105.3 95.5 88.7 83.3 76.8 72.2 69.1 63.7 MAG 0.080 0.103 0.125 0.146 0.168 0.187 0.207 0.218 0.232 S12 ANG 61.7 58.5 57.5 58.5 57.3 55.4 55.4 55.5 52.6 MAG 0.676 0.560 0.478 0.445 0.413 0.383 0.345 0.317 0.301 S22 ANG -37.8 -41.6 -45.6 -49.2 -51.6 -54.0 -58.9 -61.2 -66.0
VCE = 2 V, IC = 7 mA, ZO = 50
FREQUENCY MHz 600.00 800.00 1000.00 1200.00 1400.00 1600.00 1800.00 2000.00 2200.00 MAG 0.442 0.331 0.257 0.213 0.168 0.132 0.110 0.081 0.048 S11 ANG -56.3 -65.1 -67.8 -73.1 -74.5 -77.3 -79.7 -99.2 -123.7 MAG 7.920 6.345 5.311 4.689 4.103 3.643 3.335 3.065 2.760 S21 ANG 111.3 100.3 91.1 85.1 80.1 73.8 69.8 66.9 61.7 MAG 0.070 0.097 0.118 0.141 0.162 0.184 0.204 0.214 0.231 S12 ANG 63.0 59.0 57.7 60.4 59.5 58.3 57.4 57.5 54.8 MAG 0.610 0.507 0.434 0.407 0.386 0.359 0.323 0.301 0.286 S22 ANG -38.1 -40.7 -43.4 -45.9 -48.0 -50.5 -54.8 -56.9 -62.3
VCE = 2 V, IC = 10 mA, ZO = 50
FREQUENCY MHz 600.00 800.00 1000.00 1200.00 1400.00 1600.00 1800.00 2000.00 2200.00 MAG 0.358 0.264 0.199 0.158 0.121 0.089 0.073 0.052 0.030 S11 ANG -60.7 -68.8 -70.8 -75.7 -77.9 -80.4 -82.4 -114.2 -166.0 MAG 8.135 6.411 5.335 4.674 4.068 3.610 3.301 3.027 2.724 S21 ANG 106.8 96.5 87.8 82.4 77.5 71.4 67.8 65.1 59.9 MAG 0.068 0.090 0.113 0.139 0.157 0.180 0.198 0.211 0.228 S12 ANG 61.8 62.0 61.6 62.5 61.1 59.7 59.3 58.9 56.0 MAG 0.565 0.475 0.414 0.392 0.377 0.352 0.321 0.298 0.286 S22 ANG -36.5 -38.3 -40.1 -42.2 -44.8 -46.6 -50.6 -52.5 -58.0
7
2SC5181
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96.5
8

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